symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 14.2 20 39 50 r jc 2.5 3 w maximum junction-to-case b steady-state c/w thermal characteristicsparameter units maximum junction-to-ambient a steady-state c/w absolute maximum ratings t a =25c unless otherwise noted vv 20 gate-source voltage drain-source voltage 25 pulsed drain current c power dissipation b t c =25c continuous draincurrent g maximum units parameter t c =25c t c =100c i d 5540 100 junction and storage temperature range a p d c 5025 -55 to 175 t c =100c avalanche current c 40 repetitive avalanche energy l=0.1mh c 80 a mj maximum junction-to-ambient a t 10s c/w r ja AOI452n-channel enhancement mode field effect transistor features v ds (v) =25v i d = 55 a (v gs = 10v) r ds(on) < 8.7 m (v gs = 10v) r ds(on) < 14.7 m (v gs = 4.5v) uis tested rg,ciss,coss,crss tested general description the AOI452 uses advanced trench technology anddesign to provide excellent r ds(on) with low gate charge. this device is suitable for use in pwm, loadswitching and general purpose applications. standard product AOI452 is pb-free (meets rohs & sony 259specifications). g ds top view drain connectedto tab ipak g d s alpha & omega semiconductor, ltd. www.aosmd.com
AOI452 symbol min typ max units bv dss 25 v 1 t j =55c 5 i gss 100 na v gs(th) 1 1.8 3 v i d(on) 100 a 7 8.7 t j =125c 10 12 12 14.7 m g fs 35 s v sd 0.72 1 v i s 55 a c iss 1230 1476 pf c oss 315 400 pf c rss 190 280 pf r g 1.2 2 q g (10v) 26.4 32 nc q g (4.5v) 13.5 17 nc q gs 3.9 5 nc q gd 7.75 10 nc t d(on) 6.5 8 ns t r 10 20 ns t d(off) 22.7 30 ns t f 6.2 12 ns t rr 23.06 28 ns q rr 15.25 18 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice body diode reverse recovery time drain-source breakdown voltageon state drain current i d =250ua, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a reverse transfer capacitance i f =20a, di/dt=100a/ s v gs =0v, v ds =12.5v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a gate threshold voltage v ds =v gs , i d =250 a v ds =25v, v gs =0v v ds =0v, v gs =20v zero gate voltage drain currentgate-body leakage current forward transconductance diode forward voltage r ds(on) static drain-source on-resistance m i s =1a, v gs =0v v ds =5v, i d =10a v gs =4.5v, i d =20a gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =12.5v, i d =20a gate source chargegate drain charge total gate chargebody diode reverse recovery charge i f =20a, di/dt=100a/ s maximum body-diode continuous currentinput capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise timeturn-off delaytime v gs =10v, v ds =12.5v, r l =0.6 , r gen =3 a: the value of r ja is measured with the device in a still air environment with t a =25c. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.c: repetitive rating, pulse width limited by junction temperature t j(max) =175c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming amaximum junction temperature of t j(max) =175c. g. the maximum current rating is limited by bond-wires. rev0: april 2007 alpha & omega semiconductor, ltd. www.aosmd.com
AOI452 typical electrical and thermal characteristics 0 10 20 30 40 50 60 0 1 2 3 4 5 v gs (volts) figure 2: transfer characteristics i d (a) 6 8 10 12 14 16 18 0 10 20 30 40 50 60 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =4.5v, 20a v gs =10v, 20a 0 5 10 15 20 25 30 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =20a 25c 125c 0 20 40 60 80 100 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) v gs =4v 3.5v 6v 7v 10v 4.5v 5v 3v alpha & omega semiconductor, ltd. www.aosmd.com
AOI452 typical electrical and thermal characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 5 10 15 20 25 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z ? jc normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 1000.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 100 s 10ms 1ms dc r ds(on) limited t j(max) =175c, t a =25c v ds =12.5v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =3c/w t on t p d in descending orderd=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175c t a =25c 10 s alpha & omega semiconductor, ltd. www.aosmd.com
AOI452 typical electrical and thermal characteristics 0 10 20 30 40 50 60 0.00001 0.0001 0.001 time in avalanche, t a (s) figure 12: single pulse avalanche capability i d (a), peak avalanche current 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note b) power dissipation (w) 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note b) current rating i d (a) dd d a v bv i l t ? ? = t a =25c alpha & omega semiconductor, ltd. www.aosmd.com
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